| PART |
Description |
Maker |
| IRF7303 IRF7303TR |
Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
|
International Rectifier
http://
|
| IRL3103D1PBF |
Generation 5 Technology
|
International Rectifier
|
| IRF7304 |
Generation V Technology
|
International Rectifier
|
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRF9952PBF IRF9952TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IDT8T49N004I |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRLML6302PBF |
Generation V Technology Ultra Low On-Resustance P-Channel MOSFET
|
TY Semiconductor Co., Ltd
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
